99.95 iMolybdenum ePure Molybdenum yeMveliso yeMoly Sheet yeMoly Plate yeMoly yeFoil kwiziko lobushushu obuphezulu kunye nezixhobo ezinxulumeneyo
Iiparamitha zeMveliso
| Into | Iphepha le-molybdenum / ipleyiti |
| IBanga | Mo1, Mo2 |
| Ubungakanani bempahla | 0.2mm, 0.5mm, 1mm, 2mm |
| MOQ | ukuqengqeleka okushushu, ukucocwa, ukugudiswa |
| Isitokhwe | 1 kilogram |
| Ipropati | anti-corrosion, ukumelana nobushushu obuphezulu |
| Unyango loMphezulu | Umphezulu wokucoca ialkaline eshushu |
| Electrolytic polish surface | |
| Umphezulu obandayo | |
| Umphezulu owenziwe ngoomatshini | |
| Iteknoloji | extrusion, forging and rolling |
| Uvavanyo kunye noMgangatho | ukuhlolwa komda |
| uvavanyo lomgangatho wembonakalo | |
| inkqubo yovavanyo lokusebenza | |
| uvavanyo lweempawu zoomatshini | |
| Iinkcukacha ziya kutshintshwa ngokweemfuno zabathengi. | |
Inkcazo
| Ububanzi, mm | Ukutyeba, mm | Ukutenxa ukutyeba, min, mm | Ukucaba, % | |||
| <300mm | >0.13mm | ±0.025mm | 4% | |||
| ≥300mm | > 0.25mm | ±0.06mm | 5%-8% | |||
| Ucoceko(%) | Ag | Ni | P | Cu | Pb | N |
| <0.0001 | <0.0005 | <0.001 | <0.0001 | <0.0001 | <0.002 | |
| Si | Mg | Ca | Sn | Ba | Cd | |
| <0.001 | <0.0001 | <0.001 | <0.0001 | <0.0003 | <0.001 | |
| Na | C | Fe | O | H | Mo | |
| <0.0024 | <0.0033 | <0.0016 | <0.0062 | <0.0006 | >99.97 | |
Inkcazo
| Iinkcukacha zocingo lwemolybdenum: | ||
| Iintlobo zocingo zeMolybdenum | Ububanzi (intshi) | Ukunyamezela (%) |
| I-Molybdenum Wire ye-EDM | 0.0024" ~ 0.01" | ±3% wt |
| I-Molybdenum Spray Wire | 1/16" ~ 1/8" | ± 1% ukuya kwi-3% wt |
| Molybdenum ngocingo | 0.002" ~ 0.08" | ±3% wt |
| Ucingo lweMolybdenum(lucocekile) | 0.006" ~ 0.04" | ±3% wt |
Uluhlu lweeNkcazo
1) Ukutyeba:Isitya esishushu esishushu: 1.5 ~ 40mm;Icwecwe/icwecwe elipholileyo: 0.05 ~ 3.0mm
2) Ububanzi:Ipleyiti eqengqelekayo eshushu:≤750mm;Icwecwe / icwecwe elipholileyo: ≤1050mm;
3) Ubude:Ipleyiti eqengqelekayo eshushu:≤3500mm;Icwecwe / icwecwe elipholileyo: ≤2500mm
Isicelo
| Ukuhlelwa | Uphawu | Indawo yosetyenziso |
| Icwecwe leMo plate | Indawo yokunyibilika ephezulu, ukucoceka okuphezulu, ukwanda kwe-thermal ephantsi, i-thermal conductivity egqwesileyo, ukusebenza kwe-welding kunye nokuqhubekeka. | Isetyenziselwa ngokubanzi ukuvelisa i-electron (ion) i-beam sputtering target, ii-spare parts for ion implantation machine, i-heat sink ye-semiconductor, iinxalenye zetyhubhu ye-electron, izixhobo ze-MOCVD, kunye nesixhobo sonyango, indawo eshushu, i-crucible kunye nezinto ezixhasayo kwi-sapphire crystal furnace, i-heater, Ikhuselo lobushushu, into exhasayo, kunye nesikhephe sevacuum kunye ne-hydrogen ekhuselwe kwiziko lokufudumeza |
| Ipleyiti ecocekileyo yeMo iphathwa kubushushu obuphezulu | Ubunyulu obuphezulu, obungaguquguqukiyo kwipropathi yokwenyama kunye neekhemikhali, kunye nobushushu obuphezulu bokuchasana nokonakala | Ilungele ukwenza isiseko sepleyiti yokuchaneka kweeseramikhi zombane kunye nemathiriyeli yangasemva |
| I-Lanthanum-doped Mo plate | Ngokusebenzisa indlela yokomeleza ukusasazwa kwe-oxide, ukuguqulwa okuthile kweplastiki kunokwenziwa phantsi kobushushu begumbi emva kokunyangwa kubushushu obuphezulu ngenxa yamandla alo aphezulu, ubushushu obuphezulu bekristalis kunye namandla abalaseleyo obushushu obuphezulu kunye nokuphucula ukuqaqamba kwakhona kwekristali kunye nobushushu obuphezulu bokuchasana nokonakala. | ngakumbi afaneleke ukwenza izinto ezisetyenziswa kwindawo yokusebenza engaphezulu kwe-1500 ℃, njengesifudumezi, isikhuselo sobushushu, iplate yesiseko kunye nesikhephe kwiziko lobushushu obuphezulu. |
| I-Lanthanum-doped Mo plate iphathwa kwiqondo lokushisa eliphezulu | Amandla aphezulu obushushu obuphezulu, kunye ne-deformation ephantsi yobushushu obuphezulu ngenxa ye-oxide yayo yokusabalalisa isiphumo sokomeleza kunye nesakhiwo esithile. | ilungele ukwenza isiseko sepleyiti yokutshiza iiseramikhi ezicolekileyo kunye neseramikhi yasemva komhlaba, irack yokubeka, iplate yesiseko kunye nedyasi yobushushu obuphezulu beziko lokufudumeza. |
| Doped Mo ipleyiti | Amandla obushushu obuphezulu, ubushushu obuphantsi bekristalis, kunye nobushushu obuphezulu obunganyangekiyo ngenxa yendlela yokomeleza iqamu le potassium. | zilungele ngakumbi ukwenza iimveliso ezinobushushu obuphantsi obuphezulu, njengamacandelo etyhubhu ye-electron, isifudumezi, isikhuselo sobushushu, njalo njalo kwiziko lobushushu obuphezulu. |
| Doped Mo ipleyiti iphathwa kwiqondo lobushushu eliphezulu | Ubushushu obuphantsi obuphezulu burhubuluza ngenxa yokwakheka kwayo okuziinkozo okude kunye nokucoceka okuphezulu | ilungele ukwenza iimveliso ezinemfuno ephezulu yokucoceka kunye nokunyuka kobushushu obuphezulu, njengeplate yesiseko ye-electronic ceramics sintering okanye ukunyanga ubushushu, izinto ezixhasayo kwityhubhu ye-electron, njalo njalo. |
| Umnqamlezo ocwengileyo we-Mo plate | I-anisotropy ephantsi kunye nokusebenza kakuhle kokugoba | ngakumbi ilungele ukwandiswa, ukusonta, ukuqinisa kunye nokugoba, kunye nokwenza ubude okanye ukusonta i-Mo crucible, iindawo zeMo kufuneka zomelezwe okanye zigobe, njengeshiti elityatyiweyo, iqhekeza eligobayo, isikhephe seMo, njalo njalo. |
| Umnqamlezo ococekileyo ipleyiti ephathwayo kwiqondo lobushushu eliphezulu | I-anisotropy ephantsi kunye nokusebenza kakuhle kokugoba ngaphandle kokusebenza okufanayo kwe-Lanthanum-doped Mo plate | ngakumbi ifanele ukuqinisa kunye nokugoba, kunye nokwenza iinxalenye ze-Mo eziqinisiweyo okanye ezigobileyo ezinemfuno yobushushu obuphezulu, njengendawo yokufudumeza, iindawo ezenziweyo ezigobileyo, ubushushu obuphezulu bephenyane, njalo njalo. |
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